AP2305GN
f=1.0MHz
10000
1000
100
12
I D = -4.2A
10
V DS = -16V
8
65mΩ
Ciss
6
4
2
0
Coss
Crss
10
0
5
10
15
20
25
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
DUTY=0.5
0.2
10
0.1
0.1
1ms
0.05
1
PDM
t
0.01
T
10ms
Duty factor = t/T
0.01
100ms
Single Pulse
Peak Tj = PDM x Rthja + Ta
0.1
Rthja = 270℃/W
1s
T A =25 o C
DC
Single Pulse
0.01
0.001
0.0001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
OSCILLOSCOPE
D
TO THE
VDS
D
S
OSCILLOSCOPE
0.8 x RATED VDS
G
0.75 x RATED VDS
RG
G
S
VGS
-1~-3mA
IG
-10 V
VGS
ID
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
