AP2305GN
40
30
20
10
0
36
32
28
24
20
16
12
8
A =25 o C
T
A = 1 5 0 o C
-5.0V
-4.0V
-5.0V
-4.0V
T
65mΩ
-3.0V
-3.0V
V G = -2.0V
V
G = -2.0V
4
0
0
2
4
6
8
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
1.8
1.6
1.4
1.2
1
I D = -4.2A
I D =-4.2A
T A =25 o C
V
GS = -4.5V
120
Ω
Ω
Ω
Ω
80
0.8
0.6
40
-50
0
50
100
150
0
1
2
3
4
5
6
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
100
10
1
T j =150 o C
T j =25 o C
1
0.5
0.1
2.01E+08
0
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
1.6
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
