AP2305GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-20
-
-0.1
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-
-
V/℃
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-4.5A
53
65
VGS=-4.5V, ID=-4.2A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
-
-
-
-
100 mΩ
250 mΩ
-
-
VGS(th)
gfs
Gate Threshold Voltage
-0.5
-
-
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-1
j
Drain-Source Leakage Current (T=55oC)
-
-10
j
IGSS
Qg
± 12V
±100
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=
-
ID=-4.2A
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=-16V
VGS=-4.5V
VDS=-15V
ID=-4.2A
-
-
-
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=6Ω,VGS=-10V
RD=3.6Ω
VGS=0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-15V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min. Typ. Max. Units
VSD
trr
IS=-1.2A, VGS=0V
IS=-4.2A, VGS=0V,
dI/dt=100A/μs
-
-
-
-
-1.2
V
ns
nC
27.7
22
-
-
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
