AP2311GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-60V
250mΩ
- 1.8A
D
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant
S
SOT-23
G
Description
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
G
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
- 60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
- 1.8
A
- 1.4
A
-10
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
90
Unit
Rthj-a
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
201227051-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
